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application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; DFTimpurity diffusionhigh throughputring mechanismsiliconsilicon-germaniumtitaniumnitrideHigh Throughput Simulation On The Impurity-Vacancy Diffusion Mechanism Using First-PrinciplesIgnacio Martin-BragadoYumi ParkChristoph ZechnerYong-Seog Oh
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)293 Sept. 2018296
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