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application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; capacitorless DRAM1T DRAMSiGe quantum well (QW)band-to-band tunnelingenhanced retention timeSiGe QW 1T DRAMsub-10-ns write and eraseA Highly Scalable and Energy-Efficient 1T DRAM Embedding a SiGe Quantum Well Structure for Significant Retention EnhancementEunseon YuSeongjae Cho
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)255 Sept. 2018257
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