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application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; FinFETself-aligned double patterningtopography process simulationdepositionetchingprocess variationsThe Effect of Etching and Deposition Processes on the Width of Spacers Created during Self-Aligned Double PatterningEberhard BaerJuergen Lorenz
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)236 Sept. 2018239
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