%PDF-1.5
%
1 0 obj
<>stream
application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; KMCDFTMDvacancydiffusivitySiGeIntegrated Framework of DFT, Empirical potentials and Full Lattice Atomistic Kinetic Monte-Carlo to Determine Vacancy Diffusion in SiGeYong-Seog OhYumi ParkChristoph ZechnerIgnacio Martin-Bragado
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)228 Sept. 2018231
endstream
endobj
2 0 obj
<>/ProcSet[/PDF/Text]/ColorSpace<>/Font<>>>
endobj
3 0 obj
<>
endobj
4 0 obj
[/Separation/Black 5 0 R 14 0 R]
endobj
5 0 obj
[/ICCBased 15 0 R]
endobj
6 0 obj
<>
endobj
7 0 obj
<>
endobj
8 0 obj
<>
endobj
9 0 obj
<>
endobj
10 0 obj
<>
endobj
11 0 obj
<>
endobj
12 0 obj
<>
endobj
13 0 obj
<>
endobj
14 0 obj
<>stream
h Ŀþ½~}|~|}{}z|z{~yz}xz|wy{wx{vwzuwytvxtuxstwrtvqsuprtpqtopsnprmoqmnplmpklojknikmijlhikghkfgjegidfhdegcdfbcfabe`ad`ac_`b^_a]^`\]`[\_[\^Z[]YZ\XY[WXZVWYUVXTUWSTVSSURRTQQSPPROOQNNPMMOLLNKKMJJLIIKHHJHGIGFHFFGEEFDDECCDBBCAAB@@A?>@>=?=<><;<:9;98:8787576454343132011/00-..,--*,,)*+()*'((%&'$%$%""$ !# H
endstream
endobj
15 0 obj
<>stream
hޜwTTϽwz0z.0. Qf Ml@DEHb!(`HPb0dFJ|yyǽgs{. $O./ 'z8WGб x 0Y驾A@$/7z HeOOҬT _lN:K"N3"$F/JPrb[䥟}Qd[Sl1x{#bG\NoX3I[ql2 $8xtr p/8pCfq.Knjm͠{r28?.)ɩL^6 g,qm"[Z[Z~Q7%"
3R `̊j[~ : w! $E}kyhyRm333:
}=#vʉe
tqX)I)B>==
<8Xȉ9