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application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; spin-orbit torqueMRAMswitchingperpendicularly magnetized MTJperpendicular magnetic anisotropy formattingfield-free switchingsub-ns switchingField-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM CellsAlexander MakarovViktor SverdlovSiegfried Selberherr
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)186 Sept. 2018189
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