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application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; A Stochastic Modeling Framework for NBTI and TDDS in Small Area p-MOSFETsR AnandkrishnanS. BhagdikarN. ChoudhuryR. RaoB. FernandezA. ChaudhuryN. PariharS. Mahapatra
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)181 Sept. 2018185
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