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application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; NBTIFinFETRMGtrap generationRD modelTCADbandstructure calculationstrainModeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETsNarendra PariharRavi TiwariSouvik Mahapatra
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)176 Sept. 2018180
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