%PDF-1.5
%
1 0 obj
<>stream
application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; A2RAMTCAD simulation1T-DRAMprogramming methodologyimpact ionizationband-to-band tunnelingEvidence of fast and low-voltage A2RAM ‘1’ state programmingFrancois Tcheme WakamJoris LacordMaryline BawedinSebastien MartinieSorin CristoloveanuJean-Charles Barbe
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)115 Sept. 2018118
endstream
endobj
2 0 obj
<>stream
xcbfbaecWPTRVQUS70426153wptrvqus
R.
endstream
endobj
3 0 obj
[/Indexed 4 0 R 255 5 0 R]
endobj
4 0 obj
[/ICCBased 6 0 R]
endobj
5 0 obj
<>stream
hbdbCن.s\Am\c&Lsx˄mNO95t3}3NsnsS%g/=?o.,\sq_\l~
;/m}y_yWeF&Q4@ l6
endstream
endobj
7 0 obj
<>stream
Adobe d
$$''$$53335;;;;;;;;;;
%% ## ((%%((22022;;;;;;;;;; }" ?
3 !1AQa"q2B#$Rb34rC%Scs5&DTdE£t6UeuF'Vfv7GWgw 5 !1AQaq"2B#R3$brCScs4%&5DTdEU6teuFVfv'7GWgw ? TI%)%t@\KsQo ]^+*ܶjŮ^
juΨ>Z:%>*}bVzr-ͮ;"ֱ5!CI-_XuhuUd0.*$Y%=I/+ʷ`9R
lÃT\Lͻ}Pr_F;-v#ϯ#$oef=sX7o(˯[cݱX=RJD.= K5;}6ʺ;'Ɔ1ĸqM1k8$`>g,z:n}M4eK讽r]е>דUTd3ٹ1}MG))[eos9u&Y]H%#B4^uҾ`\s(#nYh,paen5bV LńkyJz,11Eu
kF<*q.xqsZ?}b-ǼevWeEՎ^U5w6y\Ws>sv5l=ԤuTݗA~꥟ޖ>;}2=
ߐ:ֿ: LTѮ )[3*˧
rrCMz˅`ۂ[ulܬzQd06
?"RI$I%)$IJI$RI$I%)$IJI$RI$I%)$IJI$RI$I%)%<>}vĸ *ucWo\SҬޫ՝o65| 6 VP:̓Kqe49aDPsrzv-UkK\=z> uh#:NJ yx~9vpOdt*c1Zѩ$b#Q!؏4e䟬8ny47kH.-qeų~ق]vF+keI2Q߷Qen_IwGM'1pcگ,k ). ɥ[%4]b}nO"HR] o \WgVuS]ϬMk\]ؔ,'Y{a\h7GWS]ao3+>c:}V]^n17R ᶸ3J;Ⲇt+?Ik.{l/pJR"x|ɕ蟽woE/?zbW (l i~Cg B}ڞ>_ z_q"X/s[+ݦt a}a.E쾑,aådm]]G>c ӻ}.iݏ Ků.p{#e0 = - ȥ