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application/pdfIEEE2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2018; ; ; Vertical nanowires6T-SRAMprocess modulesstatic noise marginDTCOTCADDTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAMP. MatagneH. NakamuraM.-S. KimY. KikuchiT. Huynh-BaoZ. TaoW. LiK. DevriendtL.-A. RagnarssonJ. BoemmelsA. MallikE. Altamirano-SachezF. SebaaiC. LorantN. JourdanC. PorretD. MocutaN. HaradaF. Masuoka
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)45 Sept. 201848
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